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Electronic Devices 9th Edition - Floyd Solution # caite.info Muhammad Ali Raza. Loading Preview. Sorry, preview is currently unavailable. You can download the . electronic-devices-9th-edition-by-floyd. 1 Chapter 1 Introduction to Electronics Section Atomic Structure 1. An atom 2 Chapter 2 Diode .. can you send the pdf to [email protected]? 2 weeks ago please could you send me the manual solution ([email protected]). 4 months ago. Save this Book to Read free download solution manual of electronic devices by floyd 9th edition PDF eBook at our Online Library. Get free.
Are you sure you want to Yes No. The base voltage can be found from the Thevenin equivalent drawn for the bias circuit in Figure Chapter 8 77 Base-emitter open Clipping is a handy way to collect important slides you want to go back to later. From the datasheet in textbook Figure
I1 measures the bias current.
Chapter 6 56 Calculate the voltage across each collector resistor: Q1 is in cutoff. IC will increase and Q1 will go into saturation.
No output signal. Chapter 6 57 For the block diagram of textbook Figure with no output from the power amplifier or preamplifier and only one faulty block, the power amplifier must be ok because the fault must be one that affects the preamplifier's output prior to the power amplifier. Check the input to the preamplifier. Datasheet Problems From the datasheet in textbook Figure From the 2N datasheet in Figure For maximum current gain, a 2N should be used.
In the circuit of textbook Figure , a leaky coupling capacitor would affect the biasing of the transistors, attenuate the ac signal, and decrease the frequency response. Chapter 6 59 For the 2nd stage: Chapter 6 60 V7.
The amplifier circuit is shown in Figure From the design: Chapter 6 61 C2 open C2 shorted C1 open C3 open Since the load resistor has been removed, the base voltage is altered. The base voltage can be found from the Thevenin equivalent drawn for the bias circuit in Figure Figure Applying the voltage-divider rule and including the base-emitter diode drop of 0. The changes are shown in Figure The advantage of this arrangement is that the load resistor is referenced to ground.
Figure 4. A CC amplifier has a voltage gain of approximately 1. Chapter 7 64 6. For the circuit in Figure a: Chapter 7 65 9. From Problem 9: The Q-point is at a collector current of 8. Chapter 7 66 The DC voltage at the output becomes negative instead of 0 V.
Chapter 7 67 E 25 mV 25 mV 6.
With C1 open, only the negative half of the input signal appears across RL. One of the transistors is open between the collector and emitter or a coupling capacitor is open. For the block diagram of textbook Figure with no signal from the power amplifier or preamplifier, but with the microphone working, the problem is in the power amplifier or preamplifier.
It must be assumed that the preamp is faulty, causing the power amp to have no signal.
Chapter 7 68 On the circuit board of Figure , the vertically oriented diode has been installed backwards. From the BD datasheet of textbook Figure This derating gives 1 W. As IC increases from 10 mA to approximately mA, the dc current gain increases. As IC increases above approximately mA, the dc current gain decreases.
TC is much closer to the actual junction temperature than TA.
In a given operating environment, TA is always less than TC. Chapter 7 69 Preamp quiescent current: Chapter 7 70 Signal current to load: Cin open RE2 open Q1 collector-emitter open D2 shorted Q2 drain-source open The gate-to-source voltage of an n-channel JFET must be zero or negative in order to maintain the required reverse-bias condition. Chapter 8 72 9. Chapter 8 73 Chapter 8 74 Chapter 8 75 Chapter 8 76 Chapter 8 77 The input resistance of an IGBT is very high because of the insulated gate structure.
With excessive collector current, the parasitic transistor turns on and the IGBT acts as a thyristor. When ID goes to zero, the possible faults are: If ID goes to 16 mA, the possible faults are: The device is off. The gate bias voltage must be less than VGS th. The gate could be shorted or partially shorted to ground.
The device is saturated, so there is very little voltage from drain-to-source. This indicates that VGS is too high.
The 1. Chapter 8 81 Datasheet Problems From the datasheet graph in textbook Figure There is no change in gfs over the frequency range. For the circuit of textbook Figure Chapter 8 82 From the 2N datasheet: Chapter 8 83 Multisim Troubleshooting Problems The solutions showing instrument connections for Problems 72 through 80 are available from the Instructor Resource Center.
RS shorted RD shorted RG shorted R1 open Drain-source open RD open R2 shorted Drain-source shorted R1 shorted Chapter 9 85 7. From the curve in Figure a in the textbook: From the curve in Figure b in the textbook: Chapter 9 86 Chapter 9 87 The output is clipped.
Chapter 9 90 The dc voltage at the drain will vary with adjustment and depends on IDSS.
Chapter 9 91 Multisim Troubleshooting Problems The solutions showing instrument connections for Problems 54 through 62 are available from the Instructor Resource Center. The barrier potential of a diode represents an energy gradient that must be overcome by conduction electrons and produces a voltage drop, not a source of energy. To forward-bias a diode, the positive terminal of a voltage source must be connected to the p region. A series resistor is needed to limit the current through a forward-biased diode to a value that will not damage the diode because the diode itself has very little resistance.
Section Voltage-Current Characteristic of a Diode 3. To generate the forward bias portion of the characteristic curve, connect a voltage source across the diode for forward bias and place an ammeter in series with the diode and a voltmeter across the diode. Slowly increase the voltage from zero and plot the forward voltage versus the current. A temperature increase would cause the barrier potential of a silicon diode to decrease from 0.
Section Diode Models 5. No current from the 10 V source is through the diode. You've reached the end of this preview.
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